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[目的]针对异质结(HJT)太阳电池铜栅技术中种子层湿法刻蚀诱发的微米级底切缺陷(1～3μm)对器件可靠性的制约，系统综述其形成机制与解决策略。[方法]通过剖析底切效应的电化学动力学根源(扩散传质-反应活化能-局部电场协同作用)，对比主流酸性刻蚀体系(H_2O2、过硫酸盐、过硫酸氢钾复合盐)的性能瓶颈，并评述缓蚀剂对形貌调控的作用机制。[结果]底切会导致铜栅/透明导电氧化物薄膜(TCO)界面结合强度下降(接触面积缩减10%～15%，应力集中系数提高3～4倍)与接触电阻上升，致使填充因子与短路电流密度显著劣化。过硫酸氢钾复合盐体系凭借抗Cu2+催化分解能力(刻蚀速率0.7～1.0μm/min)及工艺稳定性，优于传统体系。有机缓蚀剂(如苯并三氮唑、2-巯基苯并噻唑等)可通过选择性吸附将蚀刻因子提升至4.0～7.5，有效抑制横向刻蚀。[结论]基于缓蚀剂的功能化刻蚀液设计为平衡栅线形貌精度与界面电接触特性提供了新路径。未来需突破缓蚀剂长效稳定性及界面残留控制等关键技术瓶颈，以推动铜栅异质结电池产业化进程。
Abstract：[Objective] To address the reliability constraints imposed by micron-scale undercut defects(1-3 μm) induced by wet etching of seed layers in copper-grid heterojunction(HJT) solar cells, this review systematically summarizes their formation mechanisms and mitigation strategies. [Method] By analyzing the electrochemical kinetic origins of undercut effects(synergistic interactions among diffusion mass transfer, reaction activation energy, and localized electric fields), the performance bottlenecks of mainstream acidic etching systems(including H_2O2, persulfate, potassium monopersulfate compound) were comparatively evaluated, with emphasis on the morphological regulation mechanisms of corrosion inhibitor additives. [Result] Undercuts reduce Cu-grid/transparent conducting oxide(TCO) film interfacial bonding strength(10%-15% contact area reduction, stress concentration coefficient increase by 3-4 times) and elevate contact resistance, significantly degrading fill factor and short-circuit current density. The KPMS system demonstrates superior resistance to Cu2+-catalyzed decomposition(etching rate 0.7-1.0 μm/min) and process stability compared to conventional systems. Organic corrosion inhibitors(such as benzotriazole and 2-mercaptobenzothiazole) enhance etching factors to 4.0-7.5 through selective adsorption, effectively suppressing lateral etching. [Conclusion] Functionalized etching solutions incorporating corrosion inhibitors offer a novel approach to balance grid line morphology precision and interfacial electrical properties. Future efforts must address critical technical bottlenecks such as long-term inhibitor stability and interfacial residue control to advance the industrialization of copper-grid HJT solar cells.
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基本信息:
DOI：10.19289/j.1004-227x.2026.01.008
中图分类号:TG174.42;TM914.4
引用信息:
[1]周敏杰,王旭生,章金兵.铜栅异质结电池中种子层侧蚀现象的机制探究与改善策略研究进展[J].电镀与涂饰,2026,45(01):56-66.DOI:10.19289/j.1004-227x.2026.01.008.
基金信息:
宁波市自然科学基金重点项目（2022J148）; 国家重点研发计划课题（2024YFB3813902）