[目的]随着封装基板朝着高层数和高布线密度方向发展，层间互连盲孔的叠层数增多，盲孔发生失效的概率随之上升。[方法]通过扫描电子显微镜(SEM)、电子背散射衍射系统(EBSD)、聚焦离子束扫描电镜(FIB-SEM)等分析手段，结合快速拉脱测试，研究了电镀铜起始电流密度和镀后热处理对盲孔底部界面结构和可靠性的影响。[结果]随电镀铜起始阶段电流密度增大，盲孔底部铜晶粒的外延生长逐渐减弱，盲孔的剥离力减小。经200℃氮气氛围热处理2 h后盲孔的剥离力提高。[结论]通过适当降低电镀铜起始电流密度并配合镀后热处理可有效提升盲孔的基底铜/化学铜/电镀铜界面的结合强度，进而提高封装基板的可靠性。

[Objective] The progressive increase in layer count and wiring density of packaging substrates necessitates higher stacking numbers of blind vias for interlayer interconnections, consequently elevating their failure probability. [Method] The effects of initial copper electroplating current density and post-plating heat treatment on the interfacial structure and reliability at bottom of blind via were studied by scanning electron microscopy(SEM), electron backscatter diffraction(EBSD), focused ion beam-scanning electron microscopy(FIB-SEM), and rapid pull-off testing. [Result] As the initial current density during copper electroplating increased, the epitaxial grain growth at bottom of via was weakened, resulting in the decrease of peel force. After 2 hours of heat treatment at 200 ℃ in nitrogen atmosphere, the peel force of blind via was improved significantly. [Conclusion] The interfacial bonding strength between the substrate copper, electrolessly plated copper, and electroplated copper layers in blind vias can be effectively enhanced through optimizing the initial electroplating current density combined with post-plating heat treatment, resulting in better reliability of packaging substrates.