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[目的]微孔填孔电镀铜技术是实现印制电路板(PCB)层间电路互连的核心技术，镀层品质对PCB的电气性能和可靠性具有决定性的影响。[方法]采用N,N-二甲基-二硫甲酰胺丙磺酸钠(DPS)作为通孔电镀铜的加速剂。通过循环伏安、线性扫描伏安与恒电流测试，研究了DPS对铜电沉积行为的影响。借助量子化学计算和分子动力学模拟，分析了DPS在铜表面的吸附能力、吸附位点和吸附动力学过程。[结果]当DPS质量浓度从0 mg/L增大至6 mg/L时，铜电沉积显著加快，高于6 mg/L后DPS的加速效果趋于稳定。DPS分子中的二甲氨基是其在铜表面的主要吸附位点，而磺酸基可有效捕获溶液中的Cu2+;DPS能与抑制剂聚乙二醇(PEG)竞争吸附位点，减弱阴极极化，促进铜离子传输。[结论]本研究从分子层面揭示了DPS加速铜沉积的作用机理，为PCB填孔电镀添加剂的设计与国产化开发提供了重要的理论依据。
Abstract：[Objective] Via filling by copper electroplating is a core technology for achieving interlayer circuit interconnection in printed circuit board(PCB), and the quality of copper coating decisively influences the electrical performance and reliability of PCB. [Method] Sodium N,N-dimethyl-dithiocarbamoylpropyl sulfonate(DPS) was used as accelerator for through-hole filling by copper electroplating. The effect of DPS on copper electrodeposition behavior was studied by cyclic voltammetry, linear sweep voltammetry, and galvanostatic measurement. The adsorption capacity, adsorption sites, and adsorption kinetics of DPS on copper surface were analyzed through quantum chemical calculation and molecular dynamics simulation. [Result] The copper electrodeposition rate increased significantly as the DPS concentration was raised from 0 mg/L to 6 mg/L, beyond which the accelerating effect stabilized. The dimethylamino group in the DPS molecule served as the primary adsorption site on the copper surface, while the sulfonic acid group could effectively capture Cu2+ ions from the solution. DPS competed with the inhibitor polyethylene glycol(PEG) for adsorption sites, thereby reducing cathodic polarization and promoting copper ion transport. [Conclusion] This study elucidates how DPS accelerates copper deposition at the molecular level, providing an important theoretical basis for the design and domestic development of additives for PCB via-filling electroplating.
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基本信息:
DOI：10.19289/j.1004-227x.2025.12.001
中图分类号:TN41;TQ153.14
引用信息:
[1]张新超,王亚文,蒋宏,等.DPS对PCB通孔电镀铜电化学行为的影响及模拟分析[J].电镀与涂饰,2025,44(12):1-6.DOI:10.19289/j.1004-227x.2025.12.001.
基金信息:
广州市重点研发计划“电子化学品”重大专项揭榜挂帅项目：封装基板高端镀铜关键技术开发与产业化──高端镀铜核心添加剂基础理论研究（20220602JBGS02）
2025-07-17
2025
2025-12-31
2025
1
2025-12-20
2025-12-20