| 131 | 3 | 42 |
| 下载次数 | 被引频次 | 阅读次数 |
研究了化学机械抛光(CMP)过程中抛光液的Si O2磨料质量分数和表面活性剂对多孔Si OCH薄膜(ULK介质)介电常数(k)及抛光速率的影响。所用抛光液(pH=10)主要由0%～4%(质量分数,下同)SiO2、0.075%H_2O2、1%邻苯二甲酸氢钾和不同质量浓度的表面活性剂组成,其中表面活性剂为非离子表面活性剂脂肪醇聚氧乙烯醚(AEO-9和AEO-15)、阴离子表面活性剂十二烷基硫酸铵(ADS)和两亲性非离子表面活性剂辛基苯酚聚氧乙烯醚(OP-50)。结果表明,磨料质量分数的增大会使ULK介质的去除速率和k值都增大。聚醚类表面活性剂都能在CMP过程中很好地保护ULK介质表面,降低其去除速率,OP-50的效果尤其好。当采用2%SiO_2+0.075%H_2O_2+1%KHP+200 mg/L OP-50的抛光液进行CMP时,ULK介质的去除速率为5.2 nm/min,k值增幅低于2%,Cu和Co的去除速率基本不变。
Abstract：The effects of mass fraction of abrasive and different surfactants on the dielectric constant(k) and removal rate of porous ULK(ultralow-k) dielectric SiOCH film during chemical mechanical polishing(CMP) were studied. The slurry(pH = 10) was mainly composed of 0-4 wt.% SiO2, 0.075 wt.% H_2O2, 1 wt.% potassium hydrogen phthalate, and different mass concentrations of surfactant, which was a nonionic polyoxyethylene alkyl ether(AEO-9 or AEO-15), an anionic ammonium lauryl sulfate(ADS), or an amphipathic nonionic octylphenol polyoxyethylene ether(OP-50). The results showed that the removal rate and k value of ULK dielectric film were increased with the increasing of the mass fraction of abrasive. All of the used polyether surfactants, especially OP-50, could protect the surface of ULK dielectric film during CMP and reduce its removal rate. When CMP in a slurry composed of 2 wt.% SiO2, 0.075 wt.% H_2O2, 1 wt.% KHP, and 200 mg/L OP-50, the removal rate of ULK dielectric film was 5.2 nm/min and its k value was increased by 2% below after CMP, while the removal rates of copper and cobalt were changed slightly.
[1]吴元伟,韩传余,赵玲利,等.超低k介质材料低损伤等离子体去胶工艺进展[J].微纳电子技术, 2011, 48(11):733-738.WU Y W, HAN C Y, ZHAO L L, et al. Process progress of low-damage plasma stripping on ultralow-k dielectric materials[J]. Micronanoelectronic Technology, 48(11):733-738.
[2] GUO L, QIN X D, ZAERA F. Chemical treatment of low-k dielectric surfaces for patterning of thin solid films in microelectronic applications[J].ACS Applied Materials&Interfaces, 2016, 8(9):6293-6300.
[3] SAGI K V, TEUGELS L G, VAN DER VEEN M H, et al. Chemical mechanical polishing of chemical vapor deposited Co films with minimal corrosion in the Cu/Co/Mn/SiCOH patterned structures[J]. ECS Journal of Solid State Science and Technology, 2017, 6(5):P276-P283.
[4] SESHAN K, SCHEPIS D. Handbook of Thin Film Deposition[M]. 4th ed.Oxford:William Andrew, 2018.
[5]李若津. CMP对低k介质材料的影响及其优化方法研究[D].天津:河北工业大学, 2015.LI R J. Effect of CMP on Low k Material and Research on Its Optimization Methods[D]. Tianjin:Hebei University of Technology, 2015.
[6] LI Y L, CIOFI I, CARBONELL L, et al. Influence of absorbed water components on SiOCH low-k reliability[J]. Journal of Applied Physics,2008, 104(3):034113
[7]王立冉,邢哲,刘玉岭,等.碱性抛光液在CMP过程中对低k介质的影响[J].半导体技术, 2012, 37(1):29-32.WANG L R, XING Z, LIU Y L, et al. Effects of alkaline slurry on low-k dielectrics in CMP process[J]. Semiconductor Technology, 2012, 37(1):29-32.
[8] ZHANG B G, LIU Y L, WANG C W. BTA free alkaline slurries developed for copper and barrier CMP[J]. ECS Journal of Solid State Science and Technology, 2015, 4(11):P5112-P5117.
[9] MOEGGENBORG K J, CHOU H, HAWKINS J D, et al. CMP compositions for low-k dielectric materials:US6974777B2[P]. 2005–12–13.
[10]韩春宇,檀柏梅,高宝红,等.化学机械抛光后清洗工艺对多孔低k介质的影响[J].电镀与涂饰, 2019, 38(8):338-343.HAN C Y, TAN B M, GAO B H, et al. Effect of cleaning process on porous low-k dielectrics after chemical mechanical planarization[J]. Electroplating&Finishing, 2019, 38(8):338-343.
[11] TAMBOLI D, BANERJEE G, WADDELL M. Novel interpretations of CMP removal rate dependencies on slurry particle size and concentration[J].Electrochemical and Solid-State Letters, 2004, 7(10):F62-F65.
[12] TOMOZAWA M. Concentration dependence of the diffusion coefficient of water in SiO2 glass[J]. Journal of the American Ceramic Society, 1985,68(9):C251-C252.
基本信息:
DOI：10.19289/j.1004-227x.2021.02.004
中图分类号:TN405;TB383.2
引用信息:
[1]阳小帆,张保国,杨朝霞,等.碱性阻挡层抛光液中ULK介质抛光性能的研究[J].电镀与涂饰,2021,40(02):102-108.DOI:10.19289/j.1004-227x.2021.02.004.
基金信息:
河北省高层次人才资助项目百人计划项目（E2013100006）
2021-01-30
2021-01-30