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[目的]针对高深径比硅通孔(TSV)电镀填充中的空洞缺陷问题，筛选适用于铜互连工艺的高效抑制剂。[方法]通过循环伏安法对比了聚乙二醇20000(PEG 20000)、环氧乙烷与环氧丙烷嵌段共聚物(PE6400和17R4)及聚环氧乙烷-聚环氧丙烷单丁基醚(50HB-260)四种抑制剂对铜电沉积的抑制能力，并通过TSV电镀填孔实验进行验证；研究了电流密度和对流强度对TSV填充效果的影响，以确定适宜的工艺窗口。[结果] PEG 20000在100～200 mg/L的质量浓度范围内均能实现无空洞、无缝隙的TSV填充，其对对流强度具有良好的适应性，在搅拌速率不低于1 L/min的条件下均可实现无缺陷填充。采用“0.1 A/dm2→0.2 A/dm2→0.3 A/dm2→0.4 A/dm2”的多段阶梯电流密度进行电镀，可有效控制抑制剂在TSV中的吸附分布，实现自底向上的超填充。[结论]PEG 20000是一种高效、稳定的TSV电镀抑制剂，具有较宽的工艺窗口。
Abstract：[Objective] To address the issue of void defects in the electroplating filling of through-silicon vias(TSVs) with high-aspect-ratio, efficient suppressors suitable for copper interconnect processes were screened. [Method] The inhibition capabilities of four suppressors, namely polyethylene glycol 20000(PEG 20000), ethylene oxide/propylene oxide block copolymers(PE6400 and 17R4), and polyoxyethylene–polyoxypropylene monobutyl ether(50 HB-260), on copper electrodeposition were compared by cyclic voltammetry and verified through TSV filling experiments. The effects of current density and convection intensity on TSV filling effectiveness were studied to determine a suitable process window. [Result] PEG 20000 achieved void-free and seam-free TSV filling within a concentration range of 100 to 200 mg/L. It exhibited good adaptability to convection intensity, enabling defect-free filling under stirring rates no less than 1 L/min. When electroplating was performed using a multi-step current density sequence of “0.1 A/dm2 → 0.2 A/dm2 → 0.3 A/dm2 → 0.4 A/dm2”, the adsorption distribution of the suppressor in TSV was effectively controlled, achieving bottom-up superfilling. [Conclusion] PEG 20000 is an efficient and stable suppressor with a wide process window for TSV electroplating.
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基本信息:
DOI：10.19289/j.1004-227x.2026.04.002
中图分类号:TQ153.14;TN405
引用信息:
[1]刘萃,刘乐言,陈珊宜,等.高深径比硅通孔电镀铜用抑制剂的优选及工艺窗口[J].电镀与涂饰,2026,45(04):9-16.DOI:10.19289/j.1004-227x.2026.04.002.
基金信息:
国家自然科学基金（22178071）
2025-11-10
2025
2026-04-28
2026
2026-04-23
1
2026-04-23
2026-04-23
2026-04-23